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Proceedings Paper

Noise reduction performance of smart panels incorporating piezoelectric shunt damping
Author(s): Jaehwan Kim; Jin-Young Choi; Ran H. Cabell
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Paper Abstract

Performance test for transmitted noise reduction of smart panels is experimentally studied. Smart panel is a panel that is utilized a passive material at high frequencies and piezoelectric shunt damping at low frequencies. A multi-mode shunt damping is investigated by using the tuning method based on measured electrical impedance. Three configurations of smart panels are tested: single panel, single panel with sound absorbing material and double panel. The single panel consists of a host plate structure on which four piezoelectric patches are bonded and electrical shunt circuits are connected independently. The parameters for resonant shunt are determined by maximizing the dissipated energy through the circuit. The transmitted noise reduction performance of smart panels is tested in an acoustic tunnel. Sound absorbing material and air gap reduces the sound transmitted at the mid-frequency region effectively while the use of piezoelectric shunt damping can work at resonance frequencies of the panel structure. As a result, a remarkable noise reduction of 15dB was achieved in a wide band frequency region. The double panel exhibits better noise reduction than other panels. This approach was also applied to the structural acoustic problem of turbulent boundary layer (TBL) induced sound radiated from a panel, and results are discussed.

Paper Details

Date Published: 9 July 2002
PDF: 7 pages
Proc. SPIE 4698, Smart Structures and Materials 2002: Industrial and Commercial Applications of Smart Structures Technologies, (9 July 2002); doi: 10.1117/12.475059
Show Author Affiliations
Jaehwan Kim, Inha Univ. (South Korea)
Jin-Young Choi, Inha Univ. (South Korea)
Ran H. Cabell, NASA Langley Research Ctr. (United States)


Published in SPIE Proceedings Vol. 4698:
Smart Structures and Materials 2002: Industrial and Commercial Applications of Smart Structures Technologies
Anna-Maria Rivas McGowan, Editor(s)

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