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Proceedings Paper

Development of micromachined RF switches with piezofilm actuation
Author(s): Colin H.J. Fox; Xuesheng Chen; Hong Wen Jiang; Paul B. Kirby; Stewart McWilliam
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Paper Abstract

Current developments in RF systems require high-performance switches for applications including signal routing, impedance matching and adjustable gain amplifiers. The use of micro-switches to replace traditional semiconductor components is increasingly common, because of their advantages in terms of electrical isolation and power loss. This paper reports on a research program relating to the development of a silicon micro-machined RF micro-switch that uses thin-film piezoelectric material for actuation. Piezoelectric actuation has potential advantages over electrostatic actuation in terms of achievable forces and simplicity of structural design. This paper gives an overview of the design and analysis of a prototype switch. The design concept, based on a cantilevered silicon beam or plate, is described. A low order mathematical model, incorporating the mechanical and electrical characteristics of the switch and the interaction between the silicon structure and the piezo-drive is summarized. This allows the basic behavior of the switch to be quantified, and provides a useful tool for design and optimization purposes. The outline design and manufacture/processing of a prototype switch is discussed.

Paper Details

Date Published: 11 July 2002
PDF: 10 pages
Proc. SPIE 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology, (11 July 2002); doi: 10.1117/12.475052
Show Author Affiliations
Colin H.J. Fox, Univ. of Nottingham (United Kingdom)
Xuesheng Chen, Univ. of Nottingham (United Kingdom)
Hong Wen Jiang, Cranfield Univ. (United Kingdom)
Paul B. Kirby, Cranfield Univ. (United Kingdom)
Stewart McWilliam, Univ. of Nottingham (United Kingdom)

Published in SPIE Proceedings Vol. 4700:
Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology
Vijay K. Varadan, Editor(s)

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