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Proceedings Paper

Laterally movable gate FET (LMGFET) as a resonant gate device
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Paper Abstract

In our previous work, we had reported initial results on electrical behavior of a novel device called Laterally Movable Gate Field Effect Transistor or LMGFET. In this device, the gate of a FET moves parallel to the substrate surface, which causes the drain current to change linearly to gate motion. In this paper, we describe a potential application of this device as a resonant gate structure. A folded beam structure is utilized as a restraining spring in order to make spring more flexible in the direction of motion compared to the other two orthogonal directions. A high aspect ratio structure is utilized to decrease motion in the direction vertical to the substrate. The resonance frequency can be changed with device geometry resulting in an array of devices with different resonance frequencies on a chip. Five different resonant gate structures are designed with resonance frequencies lying in the audio frequency range. The structures are simulated by analytical and numerical methods. Damping effects are considered in the simulations resulting in quality factor Q values in the range of 500 to 1440 under atmospheric conditions for the designed structures.

Paper Details

Date Published: 11 July 2002
PDF: 11 pages
Proc. SPIE 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology, (11 July 2002); doi: 10.1117/12.475051
Show Author Affiliations
In-Hyouk Song, Louisiana State Univ. (United States)
Tinghui Xin, Louisiana State Univ. (United States)
Pratul K. Ajmera, Louisiana State Univ. (United States)


Published in SPIE Proceedings Vol. 4700:
Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology
Vijay K. Varadan, Editor(s)

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