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Proceedings Paper

Characterization of nanocrystalline silicon films
Author(s): Hongyi Lin; Jian Zhu
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Paper Abstract

The hydrogenated nanocrystalline silicon films have been prepared with plasma enhanced chemical vapor deposition method. The microstructure of these films has been studied by high resolution transmission electron microscopy, Raman scattering spectra and x-ray diffraction analysis methods. The films are especially valuable for some devices, for example, quantum dots, luminescence devices, and film pressure sensors etc. The nc-Si:H films show texture structure. The fractal dimension of this microstructure has been calculated with a Fourier filtered image. The microstructure properties of the films are discussed.

Paper Details

Date Published: 11 July 2002
PDF: 3 pages
Proc. SPIE 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology, (11 July 2002); doi: 10.1117/12.475049
Show Author Affiliations
Hongyi Lin, Beijing Institute of Technology (China)
Jian Zhu, Nanjing Electronic Devices Institute (China)


Published in SPIE Proceedings Vol. 4700:
Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology
Vijay K. Varadan, Editor(s)

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