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Proceedings Paper

RF MEMS phase shifter by microstereolithography on silicon
Author(s): Taeksoo Ji; K. J. Vinoy; Vijay K. Varadan
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Paper Abstract

Fabrication process and numerical simulations of a distributed MEMS phase shifter fabricated on a high resistivity silicon substrate using microstereolithography technique is presented here. This fabrication technique enables reduction of the early development cost by removing the need for photomasks used for defining the MEMS bridges. The distributed MEMS phase shifter consists of a high- impedance coplanar waveguide transmission line and several MEMS bridges of 4.5 micrometers height. By applying an electrostatic voltage the height of these bridges can be adjusted. This result in a variation in the distributed capacitance of the segment of the transmission line, which manifests in the phase shift at the output terminal. Experimental efforts to improve its performance is presently underway. The fabrication procedure described here shows significant promise for the use of microstereolithography techniques for RF MEMS devices. Furthermore, the present derive is built on silicon substrate, and hence is compatible with conventional IC fabrication processes.

Paper Details

Date Published: 11 July 2002
PDF: 8 pages
Proc. SPIE 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology, (11 July 2002); doi: 10.1117/12.475017
Show Author Affiliations
Taeksoo Ji, The Pennsylvania State Univ. (United States)
K. J. Vinoy, The Pennsylvania State Univ. (United States)
Vijay K. Varadan, The Pennsylvania State Univ. (United States)


Published in SPIE Proceedings Vol. 4700:
Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology
Vijay K. Varadan, Editor(s)

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