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Proceedings Paper

First passively quenched single-photon counting avalanche photodiode element integrated in a conventional CMOS process with 32-ns dead time
Author(s): Alexis Rochas; Gregoire Ribordy; B. Furrer; P. A. Besse; R. S. Popovic
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Paper Abstract

A passively quenched single photon counting avalanche diode (PQ-SPAD) is integrated in a conventional CMOS process. Co-integration of passive quenching circuit and photodiode leads to a robust pulse and a dead time as low as 32ns. The FWHM timing resolution of the PQ-SPAD is 50ps. The 30mm2 photosensitive area photodiode has a maximum photon detection probability about 20% at λ=460nm, 5% at λ=700nm and 1% at λ=900nm. The dark count rate is 300Hz at room temperature and follows a poissonian distribution. By a cooling of the detector at -20°C, a dark count rate in the 10Hz range can be obtained. The afterpulsing probability is 2.5% at room temperature with 80% of the afterpulses located in the first 100ns after the avalanche event. The PQ-SPAD is well suited for detection applications in the visible and near infrared wavelengths and where the light can be concentrated on the active area using a high magnification objective. The PQ-SPAD also offers gated operation possibility for applications where the arrival of the photons is known. Due to its outstanding characteristics obtained at very low cost, the PQ-SPAD element opens the way to integration of detector arrays.

Paper Details

Date Published: 17 February 2003
PDF: 9 pages
Proc. SPIE 4833, Applications of Photonic Technology 5, (17 February 2003); doi: 10.1117/12.474869
Show Author Affiliations
Alexis Rochas, Swiss Federal Institute of Technology (Switzerland)
Gregoire Ribordy, Univ. of Geneva (Switzerland)
B. Furrer, Univ. of Geneva (Switzerland)
P. A. Besse, Univ. of Geneva (Switzerland)
R. S. Popovic, Univ. of Geneva (Switzerland)


Published in SPIE Proceedings Vol. 4833:
Applications of Photonic Technology 5

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