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Proceedings Paper

Optimization of InGaAsP/InP buried heterostructure DFB lasers for 10-Gbit/s operation up to 100 C
Author(s): Paul M. Charles; Michele Agresti; Gordon Burns; Graham M. Berry; D. Bertone; A. Davies; R. Y. Fang; P. Gotta; Constantine Kompocholis; Gloria Magnetti; J. Massa; Giancarlo Meneghini; Roberto Paoletti; Giammarco Rossi; A. Taylor; P. Valenti; Marina Meliga
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Paper Abstract

The optimization of a 1300nm buried heterostructure(BH)InGaAsP/InP DFB laser for uncooled directly modulated 10Gbit/s operation is described. The development process as well as the key process parameters are discussed and results are presented on an optimized structure. Bandwidths in excess of 10GHz were measured at 90C chip base temperature. Clean open eye diagrams were recorded over the full temperature range, resulting in error free transmission over 40km. To our knowledge the results represent the current state of the art for uncooled BH DFB lasers operating at 1300nm.

Paper Details

Date Published: 11 March 2003
PDF: 10 pages
Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); doi: 10.1117/12.474862
Show Author Affiliations
Paul M. Charles, Agilent Technologies (United Kingdom)
Michele Agresti, Agilent Technologies (Italy)
Gordon Burns, Agilent Technologies (United Kingdom)
Graham M. Berry, Agilent Technologies (United Kingdom)
D. Bertone, Agilent Technologies (Italy)
A. Davies, Agilent Technologies (United Kingdom)
R. Y. Fang, Agilent Technologies (Italy)
P. Gotta, Agilent Technologies (Italy)
Constantine Kompocholis, Agilent Technologies (United Kingdom)
Gloria Magnetti, Agilent Technologies (Italy)
J. Massa, Agilent Technologies (United Kingdom)
Giancarlo Meneghini, Agilent Technologies (Italy)
Roberto Paoletti, Agilent Technologies (Italy)
Giammarco Rossi, Agilent Technologies (Italy)
A. Taylor, Agilent Technologies (United Kingdom)
P. Valenti, Agilent Technologies (Italy)
Marina Meliga, Agilent Technologies (Italy)


Published in SPIE Proceedings Vol. 4947:
Laser Diodes, Optoelectronic Devices, and Heterogenous Integration

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