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Proceedings Paper

Interferometric assessment of laser-induced damage to semiconductors
Author(s): James L. Blackshire; Andrew Zakel; Shekhar Guha
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Paper Abstract

It is important to determine the onset of damage as well as the extent of the damage area when materials are illuminated by intense laser radiation. In this work, an optical interferometric technique was used to assess laser-induced damage in semiconductor materials based on the three-dimensional, topographic characteristics of the damage site. Both antireflection coated and uncoated materials were evaluated for variations of fluence level, focused spot size, and laser repetition rate. The interferometric technique was non-contact and nondestructive in nature, providing a high-resolution capability of assessing damage levels on the surfaces of the materials.

Paper Details

Date Published: 30 May 2003
PDF: 10 pages
Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003); doi: 10.1117/12.474855
Show Author Affiliations
James L. Blackshire, Air Force Research Lab. (United States)
Andrew Zakel, Anteon Corp. (United States)
Shekhar Guha, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 4932:
Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization
Gregory J. Exarhos; Arthur H. Guenther; Norbert Kaiser; Keith L. Lewis; M. J. Soileau; Christopher J. Stolz; Adolf Giesen; Horst Weber, Editor(s)

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