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Proceedings Paper

Extremely broadband superluminescent diodes/semiconductor optical amplifiers in optical communication band
Author(s): Chia-Wei Tsai; Yu-Chia Chang; Gagik Sh. Shmavonyan; Yi-Shin Su; Ching-Fuh Lin
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Paper Abstract

Superluminescent diodes with broad emission bandwidth characteristics and the mechanism of carrier distribution in the active layer are explored. Asymmetric active layer structure is used for the broadband purpose. Using InP substrate with five 60Å InGaAsP quantum wells and two 150Å InGaAs quantum wells, we get a very broad emission spectrum. The spectral width is nearly 400 nm, almost covering the range from 1250nm to 1650nm.

Paper Details

Date Published: 17 June 2003
PDF: 9 pages
Proc. SPIE 4989, Optical Devices for Fiber Communication IV, (17 June 2003); doi: 10.1117/12.474821
Show Author Affiliations
Chia-Wei Tsai, National Taiwan Univ. (Taiwan)
Yu-Chia Chang, National Taiwan Univ. (Taiwan)
Gagik Sh. Shmavonyan, National Taiwan Univ. (Taiwan)
Yi-Shin Su, National Taiwan Univ. (Taiwan)
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4989:
Optical Devices for Fiber Communication IV
Michel J. F. Digonnet, Editor(s)

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