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Proceedings Paper

Erbium/ytterbium-activated silica-titania planar and channel waveguides prepared by rf-sputtering
Author(s): Alessandro Chiasera; Maurizio Montagna; Cristiana Tosello; Rogeria Rocha Goncalves; Andrea Chiappini; Maurizio Ferrari; Luca Zampedri; Stefano Pelli; Giancarlo C. Righini; Andre Monteil; Vittorio Foglietti; Antonio Minotti; Rui Manuel Almeida; A. Marques; V. Soares
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Paper Abstract

SiO2-TiO2:Er3+-Yb3+ waveguides were prepared by rf-sputtering technique. The active films were deposited on silica-on-silicon and v-SiO2 substrates. The parameters of preparation were chosen in order to optimize the waveguides for operation in the NIR region with particular attention to the minimization of losses. The thickness of the waveguides and the refractive index at 632.8 and 543.5 nm were measured by an m-line apparatus. The losses, for the TE0 mode, were evaluated at 632.8 and 1300 nm. Roughness measurements were carried out by means of a stylus profilometer. The structural properties were investigated with several techniques such as Energy Dispersive Spectroscopy and Raman Spectroscopy. All waveguides were single-mode at 1550 nm. An attenuation coefficient equal or lower than 0.2 dB/cm was measured both at 632.8 nm and 1300 nm. The emission 4I13/2 4I15/2 of Er3+ ion transition with a 40 nm bandwidth was observed upon excitation in the TE0 mode at 981 and 514.5 nm. Back energy transfer from Er3+ to Yb3+ was demonstrated by measurement of Yb3+ emission upon Er3+ excitation at 514.5 nm. Photoluminescence excitation spectroscopy was used to obtain information about the effective excitation efficiency of Er3+ ions by co-doping with Yb3+ ions. Channel waveguides in rib configuration were obtained by etching the active film by a wet etching process. Scanning Electron Microscopy was used to analyze the morphology of the waveguides.

Paper Details

Date Published: 17 June 2003
PDF: 9 pages
Proc. SPIE 4990, Rare-Earth-Doped Materials and Devices VII, (17 June 2003); doi: 10.1117/12.474774
Show Author Affiliations
Alessandro Chiasera, INFM (Italy)
Univ. degli Studi di Trento (Italy)
Maurizio Montagna, INFM (Italy)
Univ. degli Studi di Trento (Italy)
Cristiana Tosello, INFM (Italy)
Univ. degli Studi di Trento (Italy)
Rogeria Rocha Goncalves, Univ. degli Studi di Trento (Italy)
Andrea Chiappini, Istituto di Fotonica e Nanotecnologie - CNR (Italy)
Maurizio Ferrari, Istituto di Fotonica e Nanotecnologie - CNR (Italy)
Luca Zampedri, Istituto di Fotonica e Nanotecnologie - CNR (Italy)
Stefano Pelli, Istituto di Fisica Applicata - CNR (Italy)
Giancarlo C. Righini, Istituto di Fisica Applicata - CNR (Italy)
Andre Monteil, POMA, UMR-CNRS Univ. d'Angers (France)
Vittorio Foglietti, Istituto di Fotonica e Nanotechnologies - CNR (Italy)
Antonio Minotti, Istituto di Fotonica e Nanotechnologies - CNR (Italy)
Rui Manuel Almeida, Istituto Superior Technico (Portugal)
A. Marques, Istituto Superior Technico (Portugal)
V. Soares, Ctr. de Microsistemas e Nanotecnologias (Portugal)


Published in SPIE Proceedings Vol. 4990:
Rare-Earth-Doped Materials and Devices VII
Shibin Jiang; Jacques Lucas, Editor(s)

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