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Proceedings Paper

Erbium-doped planar waveguides with atomic layer deposition method
Author(s): Kimmo Solehmainen; Paivi Heimala; Markku Kapulainen; Kirsi Polamo; Runar Tornqvist
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Paper Abstract

In this work the feasibility of the atomic layer deposition (ALD) in producing erbium-doped waveguides is studied. Two microns thick erbium-doped aluminum oxide layers were grown with ALD on silica-coated silicon wafers. The waveguides were patterned using photolithography and wet etching. Resulted single-mode ridge-type waveguides were measured to obtain absorption, emission, fluorescence lifetime, and gain characteristics. Optical pumping was done using the 980 nm wavelength. The material showed broad emission spectrum with FWHM of 52 nm and maximum absorption of 6.2 dB/cm at 1530 nm. Maximum signal enhancement of 2.6 dB/cm was measured at 1530 nm for the 20 dBm signal power.

Paper Details

Date Published: 17 June 2003
PDF: 8 pages
Proc. SPIE 4990, Rare-Earth-Doped Materials and Devices VII, (17 June 2003); doi: 10.1117/12.474758
Show Author Affiliations
Kimmo Solehmainen, VTT Ctr. for Microelectronics (Finland)
Paivi Heimala, VTT Ctr. for Microelectronics (Finland)
Markku Kapulainen, VTT Ctr. for Microelectronics (Finland)
Kirsi Polamo, Planar Systems, Inc. (Finland)
Runar Tornqvist, Planar Systems, Inc. (Finland)


Published in SPIE Proceedings Vol. 4990:
Rare-Earth-Doped Materials and Devices VII
Shibin Jiang; Jacques Lucas, Editor(s)

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