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Proceedings Paper

Impact of scanner tilt and defocus on CD uniformity across field
Author(s): Shangting F. Detweiler; Simon Chang; Sandra Zheng; Patrick Gagnon; Christopher C. Baum; Mark A. Boehm; Jay M. Brown; Catherine H. Fruga
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Paper Abstract

Gate critical dimension (CD) uniformity across field is a key parameter in total gate CD control; it is especially important for highly integrated microprocessor chip with large die size and high speed. Intensive study has been conducted to reveal the impact of scanner leveling tilt, defocus and illumination distribution on CD uniformity across field. Correspondingly CD in die range, vertical-horizontal CD bias, resist side wall angle and profile have all been characterized and monitored for each individual scanner. The monitoring methodology we have established enables us to maintain these CD parameters within fairly tight control range, and also provided efficient and accurate data on tool capability and marginality for running production.

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474638
Show Author Affiliations
Shangting F. Detweiler, Texas Instruments Inc. (United States)
Simon Chang, Texas Instruments Inc. (United States)
Sandra Zheng, Texas Instruments Inc. (United States)
Patrick Gagnon, Texas Instruments Inc. (United States)
Christopher C. Baum, Texas Instruments Inc. (United States)
Mark A. Boehm, Texas Instruments Inc. (United States)
Jay M. Brown, Nikon Precision Inc. (United States)
Catherine H. Fruga, Nikon Precision Inc. (United States)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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