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Proceedings Paper

Integration using KrF and ArF resist materials in a full via firstdual-damascene process scheme with CVD OSG low-k dielectric
Author(s): Scott W. Jessen; K. Steiner; Thomas M. Wolf; William D. Josephson; S. Lytle; Mitsuru Sato; Chung Yih Lee; Ming Hui Fan
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Paper Abstract

Using a full via first (FVF) dual damascene (DD) scheme for copper processing with low-k dielectrics has presented many new challenges to the semiconductor industry. Among those challenges, for photolithography, resist poisoning at the trench level has been the most daunting. Resist and bottom anti-reflective coating (BARC) screenings for poisoning at the 0.13 micrometers and 0.10 micrometers technology nodes have been performed on a variety of KrF and ArF resist and BARC platforms using a simple semi-qualitative method. By varying resist parameters such as resin, photoacid generator (PAG), and solvent types, a lithographically suitable KrF resist is found for the 0.13 micrometers node with minimal sensitivity to poisoning. In addition, ArF resists and BARCs were screened for their sensitivity to poisoning for the 0.10 micrometers node. Suitable resist and BARC candidates are identified for preliminary use for the 0.10 micrometers node.

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474632
Show Author Affiliations
Scott W. Jessen, Agere Systems (United States)
K. Steiner, Agere Systems (United States)
Thomas M. Wolf, Agere Systems (United States)
William D. Josephson, Agere Systems (United States)
S. Lytle, Agere Systems (United States)
Mitsuru Sato, Ohka America, Inc. (Japan)
Chung Yih Lee, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Ming Hui Fan, Chartered Semiconductor Manufacturing Ltd. (Singapore)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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