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Proceedings Paper

Is model-based optical proximity correction ready for manufacturing? Study on 0.12- and 0.175-um DRAM technology
Author(s): Yuping Cui; Franz X. Zach; Shahid A. Butt; Wai-Kin Li; Bernhard Liegl; Lars W. Liebmann
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Paper Abstract

Two full-chip OPC approaches, a traditional rule-based approach and a more recent model-based approach are compared on DRAM applications using both ArF and KrF lithography, with off-axis illumination and phase shift masks. The similarities and differences between these two OPC approaches are compared in detail with selected one- and two-dimensional layout situations. Our results from the model-based approach show good line width control for one- dimensional structures and improved line-end printing for two-dimensional structures; however, results also show severe process window limitations for some layouts. The cause of the process window limitations with the model-based approach are discussed. To address the process window limitations in the model-based approach, a rule-based pre- correction was used to ensure adequate process window at deviated dose and focus conditions. With pre-correction combined with the model-based approach, our wafer data shows good correction quality and process window.

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474618
Show Author Affiliations
Yuping Cui, IBM Microelectronics (United States)
Franz X. Zach, IBM Microelectronics (United States)
Shahid A. Butt, Infineon Technologies Corp. (United States)
Wai-Kin Li, IBM Microelectronics (United States)
Bernhard Liegl, Infineon Technologies Corp. (United States)
Lars W. Liebmann, IBM Microelectronics (United States)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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