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Proceedings Paper

157-nm lithography with high numerical aperture lens for 70-nm technology node
Author(s): Toshifumi Suganaga; Noriyoshi Kanda; J. Kim; Osamu Yamabe; Kunio Watanabe; Takamitsu Furukawa; Seiro Miyoshi; Toshiro Itani; Julian S. Cashmore; Malcolm C. Gower
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Paper Abstract

l57nm lithography is being investigated for the sub-7Onm technology node of semiconductor devices. Many efforts have been reported on the exposure tool, the F2 laser, the resist materials, the resist processing and the mask materials1. A critical component for the success of this 157nm lithography is the availability of high numerical aperture (NA) lenses that lead to higher resolution capability and higher process margin. In this article, we describe our recent evaluation results of a high precision 157nm Microstepper with 0.85 NA lens combined with simulation analysis of the lithographic performance. The details of the evaluation results discussed here include the resolution limit of the high NA lens and the possible effects of intrinsic birefringence upon the lithographic performance.

Paper Details

Date Published: 30 July 2002
PDF: 10 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474606
Show Author Affiliations
Toshifumi Suganaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Noriyoshi Kanda, Semiconductor Leading Edge Technologies, Inc. (Japan)
J. Kim, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Yamabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kunio Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takamitsu Furukawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiro Miyoshi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julian S. Cashmore, Exitech Ltd. (United Kingdom)
Malcolm C. Gower, Exitech Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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