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Proceedings Paper

157-nm lithography with high numerical aperture lens for 70-nm technology node
Author(s): Toshifumi Suganaga; Noriyoshi Kanda; J. Kim; Osamu Yamabe; Kunio Watanabe; Takamitsu Furukawa; Seiro Miyoshi; Toshiro Itani; Julian S. Cashmore; Malcolm C. Gower
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Paper Abstract

Abstract not available.

Paper Details

Date Published: 30 July 2002
PDF: 10 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474606
Show Author Affiliations
Toshifumi Suganaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Noriyoshi Kanda, Semiconductor Leading Edge Technologies, Inc. (Japan)
J. Kim, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Yamabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kunio Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takamitsu Furukawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiro Miyoshi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julian S. Cashmore, Exitech Ltd. (United Kingdom)
Malcolm C. Gower, Exitech Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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