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Proceedings Paper

Attenuating phase-shifting mask at 157 nm
Author(s): Vladimir Liberman; Mordechai Rothschild; Steven J. Spector; Keith E. Krohn; Susan G. Cann; Stefan Hien
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Paper Abstract

An attenuating phase shifting mask has been designed, fabricated, and tested at 157 nm. It consists of two layers, a metal attenuator and a transparent phase shifter. The metal, platinum, was chosen for its chemical and radiation stability. The phase shifter was a commercial spin-on glass. A single step of pattern transfer has been implemented, which significantly simplifies the fabrication process of the mask. The lithographic advantage in increased depth of focus was demonstrated for 130-nm spaces and contacts, and it was found to agree with numerical simulations.

Paper Details

Date Published: 30 July 2002
PDF: 7 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474603
Show Author Affiliations
Vladimir Liberman, MIT Lincoln Lab. (United States)
Mordechai Rothschild, MIT Lincoln Lab. (United States)
Steven J. Spector, MIT Lincoln Lab. (United States)
Keith E. Krohn, MIT Lincoln Lab. (United States)
Susan G. Cann, MIT Lincoln Lab. (United States)
Stefan Hien, Infineon Technologies Corp. (United States)
International SEMATECH (United States)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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