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Proceedings Paper

Flare and its impact on low-k1 KrF and ArF lithography
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Paper Abstract

We present a complete method for the characterization and modeling of flare based on the measurement of the modulation transfer function (MTF) of scanners. A point-spread function (PSFscat) representing only the scattered light or flare in the tool is inferred by comparing the measured MTF with a calculated MTF for aberration-free imaging. This PSFscat is then used to predict the effect of flare for different layouts. In particular, local variations in pattern density are shown to couple with mid- and short-range flare and lead to significant CD non-uniformity across the field. Finally, we examine double exposure techniques that are sensitive to flare because of the total light reaching the wafer, from the two masking steps.

Paper Details

Date Published: 30 July 2002
PDF: 13 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474598
Show Author Affiliations
Bruno M. La Fontaine, Advanced Micro Devices, Inc. (United States)
Mircea V. Dusa, ASML (United States)
Alden Acheta, Advanced Micro Devices, Inc. (United States)
Cinti Chen, Advanced Micro Devices, Inc. (United States)
Anatoly Bourov, Motorola (United States)
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)
Lloyd C. Litt, Motorola (United States)
Melchior Mulder, ASML (Netherlands)
Rolf Seltman, Advanced Micro Devices, Inc. (United States)
Judith van Praagh, ASML (Netherlands)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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