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Proceedings Paper

Extending KrF to 100-nm imaging with high-NA- and chromeless phase lithography technology
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Paper Abstract

In this paper the concept of chromeless phase lithography (CPL) is introduced and experimental results on an ASML PAS 5500/800 are presented. CPL is a single exposure technique and is capable of resolution enhancement on all device layers (bright and dark field masks). Line space structures through pitch are measured with cross section and have O.35jim depth of focus (DOF) at 10% exposure latitude without forbidden pitches. CPL experimental results for a k1 of 0.38 (½ pitch) are presented for three DRAM device layers, isolation brick wall, storage capacitor, and honeycomb contact. Each of these layers have a DOF of O.35jim at 10% exposure latitude. CPL experimental results are presented for a SRAM gate and contact with lOOnm feature size (k1=O.32) and have a DOF of O.35jim at 10% exposure latitude.

Paper Details

Date Published: 30 July 2002
PDF: 13 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474594
Show Author Affiliations
Robert John Socha, ASML (United States)
Douglas J. Van Den Broeke, ASML MaskTools, Inc. (United States)
Linda Yu, ASML MaskTools, Inc. (United States)
Will Conley, Motorola (United States)
Wei Wu, Motorola (United States)
J. Fung Chen, ASML MaskTools, Inc. (United States)
John S. Petersen, Petersen Advanced Lithography, Inc. (United States)
David J. Gerold, Petersen Advanced Lithography, Inc. (United States)
Judith van Praagh, ASML (Netherlands)
Richard Droste, ASML (Netherlands)
Donis G. Flagello, ASML (United States)
Stephen Hsu, ASML MaskTools, Inc. (United States)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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