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Proceedings Paper

Analysis of focus errors in lithography using phase-shift monitors
Author(s): Bruno M. La Fontaine; Mircea V. Dusa; Jouke Krist; Alden Acheta; Jongwook Kye; Harry J. Levinson; Carlo Luijten; Craig B. Sager; Jack J. Thomas; Judith van Praagh
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Paper Abstract

We present here a procedure to characterize focus behavior on a first generation prototype 193-nm scanner using phase-shift focus monitors, which clearly identifies the influence of full field dynamic effects and that of the wafer topography and flatness. These results are used to correct the systematic errors due to incorrect tool set-up and show that proposed procedure has capability to identify focus errors and on this basis to construct a focus budget for all components: reticle, wafer, tool. We also present results using a new focus monitor based on phase gratings, which is more sensitive than the traditional phase-shift focus monitor.

Paper Details

Date Published: 30 July 2002
PDF: 10 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474581
Show Author Affiliations
Bruno M. La Fontaine, Advanced Micro Devices, Inc. (United States)
Mircea V. Dusa, ASML (United States)
Jouke Krist, ASML (Netherlands)
Alden Acheta, Advanced Micro Devices, Inc. (United States)
Jongwook Kye, Advanced Micro Devices, Inc. (United States)
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)
Carlo Luijten, ASML (United States)
Craig B. Sager, Benchmark Technologies, Inc. (United States)
Jack J. Thomas, Advanced Micro Devices, Inc. (United States)
Judith van Praagh, ASML (Netherlands)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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