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Proceedings Paper

CD uniformity improvement by active scanner corrections
Author(s): Jan B.P. van Schoot; Oscar Noordman; Peter Vanoppen; Frans Blok; Donggyu Yim; Chan-Ha Park; Byeong-Ho Cho; Thomas Theeuwes; Young-Hong Min
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Paper Abstract

As resolution shrinks, also the demands for litho CD Uniformity are becoming tighter. In replicating the mask pattern into photoresist, a sequence of modules within the patterning cluster (coat, expose, develop, etch) is responsible for CD non-uniformity. So far, the strategy has been to make the contribution of each of these modules as small as possible. The CD Uniformity can be improved in a more efficient way by compensating the various error sources with adapted dose profiles on the scanner. An inventory is made of the requirements for this compensation mechanism. In more detail a description is given how the scanner can apply these dose corrections. With experiments, the feasibility of the concept is proven. Improvements in CD Uniformity over 5nm are demonstrated, both on test structures as well as on real device layers.

Paper Details

Date Published: 30 July 2002
PDF: 11 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474579
Show Author Affiliations
Jan B.P. van Schoot, ASML (Netherlands)
Oscar Noordman, ASML (Netherlands)
Peter Vanoppen, ASML (Netherlands)
Frans Blok, ASML (Netherlands)
Donggyu Yim, Hynix Semiconductor Inc. (South Korea)
Chan-Ha Park, Hynix Semiconductor Inc. (South Korea)
Byeong-Ho Cho, Hynix Semiconductor Inc. (South Korea)
Thomas Theeuwes, ASML (South Korea)
Young-Hong Min, ASML (South Korea)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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