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Proceedings Paper

Subwavelength lithography: an impact of photo mask errors on circuit performance
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Paper Abstract

The impact of photo mask manufacturing errors in the photolithography process and subsequently on the final device and test circuit (ring oscillator) performance are investigated. A statistical Monte Carlo process generates a population of normally distributed simulated photo mask errors during the reticle manufacturing process. Further steps predict how these photo mask errors impact printed poly gate patterns under different lithography conditions. Sensitivity analysis performed with the Sequoia Device Designer software tool identified the metal oxide semiconductor field effect transistor (MOSFET) channel length (Lpoly) as the most sensitive MOSFET parameter and an estimate of the distribution of device performance for realistic photo mask errors is made.

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474575
Show Author Affiliations
Linard Karklin, Numerical Technologies, Inc. (United States)
Stan Mazor, Numerical Technologies, Inc. (United States)
Devendra Joshi, Numerical Technologies, Inc. (United States)
Artur P. Balasinski, Cypress Semiconductor Corp. (United States)
Valery Axelrad, Sequoia Design Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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