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Proceedings Paper

Optimization of process condition to balance MEF and OPC for alternating PSM: control of forbidden pitches
Author(s): Keeho Kim; Yong-Seok Choi; Robert John Socha; Donis G. Flagello
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Paper Abstract

The feasibility study to use high NA ArF lithography for 70 nm process development was done. After intensive simulation works, new forbidden-itch behavior of alternating PSM in low k1 imaging was found out. This forbidden pitch due to extremely small MEF and OPE of alternating PSM at small (sigma) . In order understand the mechanism and behavior of the forbidden-pitch, simulation and experiment were done as function of critical parameters of NA, (sigma) and wavelength. Solution to control forbidden-pitch for low k1 imaging of 70 nm has been address as critical item which needs to be overcome.

Paper Details

Date Published: 30 July 2002
PDF: 7 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474573
Show Author Affiliations
Keeho Kim, Texas Instruments Inc. (United States)
Yong-Seok Choi, Texas Instruments Inc. (United States)
Robert John Socha, ASML (United States)
Donis G. Flagello, ASML (United States)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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