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Proceedings Paper

High-NA ArF lithography for 70-nm technologies
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Paper Abstract

Complementary phase shift mask (c:PSM) is one of the most promising resolution enhancement techniques (RET) to extend low k1 optical lithography. Nonetheless binary intensity mask (BIM) imaged with 193 nm wavelength at high numerical aperture (0.75) off-axis illumination (OAI) might still be used for nested through isolated feature sizes as small as 70 nm. We compare the feasibility of using c:PSM and BIM for 70nm generation technologies. Experimental results of high NA imaged BIM and c:PSM are presented.

Paper Details

Date Published: 30 July 2002
PDF: 12 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474570
Show Author Affiliations
Patrick K. Montgomery, Motorola (United States)
IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)
Kevin Lucas, Motorola (United States)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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