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Proceedings Paper

Solutions for printing sub-100-nm contacts with ArF
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Paper Abstract

This study assesses the various approaches to printing contacts in the sub 100nm regime using 193nm. Traditional techniques are analyzed along with the use of tri-tone contacts and pupil filtering. Approaches using attPSM masks looks promising down to pitches of 300nm. Below this, assist features may be needed to prevent residual artifacts due to sidelobes. For pitches > 400nm the use of tri-tone masks show a significant improvement in process latitude and ease of overlapping process windows. The pupil filter solution does not seem provide any significant improvement as compared to other solutions with the exception that it provides the lower MEF. Realization of this solution will increase machine complexity and will possibly impact throughput, especially if using transmission filters. However, pupil filtering can be an option for isolated contact layers that are printed with binary masks. We find that the process and enhancement techniques to print a dense contacts and isolated contacts to be vastly different. This may require a split into two exposures if an extensive pitch range is needed.

Paper Details

Date Published: 30 July 2002
PDF: 12 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474569
Show Author Affiliations
Paul Graeupner, Carl Zeiss (Germany)
Aksel Goehnermeier, Carl Zeiss (Germany)
Martin Lowisch, Carl Zeiss (Germany)
Reiner B. Garreis, Carl Zeiss (Germany)
Donis G. Flagello, ASML (United States)
Steven G. Hansen, ASML (United States)
Robert John Socha, ASML (United States)
Carsten Koehler, ASML (Netherlands)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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