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Proceedings Paper

Model-based design improvements for the 100-nm lithography generation
Author(s): Kevin Lucas; Sergei V. Postnikov; Kyle Patterson; Chi-Min Yuan; Carla Nelson-Thomas; Matthew A. Thompson; Russell L. Carter; Lloyd C. Litt; Patrick K. Montgomery; Karl Wimmer
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Paper Abstract

Due to the challenging design rule and CD control requirements of the 100 nm device generation, a large number of complex patterning techniques are likely to be used for random logic devices. The complexity of these techniques places considerable strain upon model-based OPC software to identify and compensate for a wide range of printing non- idealities. Additionally, the rapidly increasing cost of advanced reticles has increased the urgency of obtaining reticles devoid of process limiting design or OPC errors. We have evaluated the capability of leading edge model-based OPC software to meet the challenging lithography needs of the 100 nm device generation. Specifically, we have implemented and verified model usefulness to correct for pattern deformation in complex binary gate, contact and via processes utilizing highly optimized illumination. Additionally, we present results showing the abilities of model-based methods to accurately find design related printing problems in complementary phase shift gate designs before they are committed to an expensive reticle.

Paper Details

Date Published: 30 July 2002
PDF: 12 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474563
Show Author Affiliations
Kevin Lucas, Motorola (United States)
Sergei V. Postnikov, Motorola (United States)
Kyle Patterson, Motorola (United States)
Chi-Min Yuan, Motorola (United States)
Carla Nelson-Thomas, Motorola (United States)
Matthew A. Thompson, Motorola (United States)
Russell L. Carter, Motorola (United States)
Lloyd C. Litt, Motorola (United States)
Patrick K. Montgomery, Motorola (United States)
IMEC (Belgium)
Karl Wimmer, Motorola (United States)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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