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Proceedings Paper

Spectral metrologies for ultra-line-narrowed F2 laser
Author(s): Takanori Nakaike; Osamu Wakabayashi; Toru Suzuki; Hakaru Mizoguchi; Kiyoharu Nakao; Ryoichi Nohdomi; Tatsuya Ariga; Naoki Kitatochi; Takashi Suganuma; Takahito Kumazaki; Kazuaki Hotta; Masaki Yoshioka
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Paper Abstract

The roadmap of semiconductor fabrication predicts that the semiconductor market will demand 65 nm node devices from 2004/2005. Therefore, an Ultra-Line-Narrowed F2 laser for dioptric projection systems is being developed under the ASET project 'The F2 Laser Lithography Development Project.' The target of this project is to achieve a F2 laser spectral bandwidth below 0.2 pm (FWHM) and an average power of 25W at a repetition rate of 5 kHz. Accurate measurements of the laser spectrum and of the laser wavelength stability are therefore very important. We therefore developed a VUV wavemeter with a Br-lamp to measure the absolute F2 laser wavelength. We obtained 157.631 nm for the main F2 laser transition using the Br-lamp reference lines at 157.4840 nm and 157.6385 nm. We have also developed a VUV high-resolution spectrometer to measure spectral profiles, which was calibrated by 157 nm coherent light source (157CLS). The 157CLS is a very narrow line-width, which can be approximated by delta function. The 157CLS had a line-width of 0.008 pm (Full-Width-At-Half- Maximum, FWHM) and a power of 0.1 mW. The instrument function of the high-resolution spectrometer measured by the 157CLS was 0.10 pm (FWHM). As a result, the deconvolved FWHM of the ultra-line narrowed F2 laser is 0.12 pm, the deconvolved spectral purity containing 95% of the total energy (E95) was less than 0.45 pm.

Paper Details

Date Published: 30 July 2002
PDF: 8 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474560
Show Author Affiliations
Takanori Nakaike, Association of Super-Advanced Electronics Technologies (Japan)
Osamu Wakabayashi, Association of Super-Advanced Electronics Technologies (Japan)
Toru Suzuki, Association of Super-Advanced Electronics Technologies (Japan)
Hakaru Mizoguchi, Association of Super-Advanced Electronics Technologies (Japan)
Kiyoharu Nakao, Association of Super-Advanced Electronics Technologies (Japan)
Ryoichi Nohdomi, Association of Super-Advanced Electronics Technologies (Japan)
Tatsuya Ariga, Association of Super-Advanced Electronics Technologies (Japan)
Naoki Kitatochi, Association of Super-Advanced Electronics Technologies (Japan)
Takashi Suganuma, Association of Super-Advanced Electronics Technologies (Japan)
Takahito Kumazaki, Association of Super-Advanced Electronics Technologies (Japan)
Kazuaki Hotta, Association of Super-Advanced Electronics Technologies (Japan)
Masaki Yoshioka, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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