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Proceedings Paper

Simulation and characterization of silicon oxynitrofluoride films as a phase-shift mask material for 157-nm optical lithography
Author(s): SungKwan Kim; Eunchul Choi; Hyoungdo Kim; Jungmin Kim; Kwangsoo No
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Paper Abstract

Silicon oxynitrofluoride has been studied as a new candidate material for High Transmittance Attenuated Phase Shift Mask (HT-Att-PSM). The requirements of HT-Att-PSM are 20 +/- 5% transmittance and 180 degree(s) phase shift at the exposure wavelength (157 nm) and less than 40% transmittance at the inspection wavelength (193 nm). Si-O-N-F films were deposited with the change of process parameters such as gas flow rate and deposition time to find optimum conditions to meet above requirements. In this study, effects of process parameters on the optical properties of Si-O-N-F films were examined. To satisfy the requirements of HT-Att-PSM, a new mask structure was suggested and analyzed.

Paper Details

Date Published: 30 July 2002
PDF: 7 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474558
Show Author Affiliations
SungKwan Kim, Korea Advanced Institute of Science and Technology (South Korea)
Eunchul Choi, Korea Advanced Institute of Science and Technology (South Korea)
Hyoungdo Kim, Samsung Electronics Co., Ltd. (South Korea)
Jungmin Kim, Samsung Electronics Co., Ltd. (South Korea)
Kwangsoo No, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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