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Proceedings Paper

Aberration determination in early 157-nm exposure system
Author(s): Bruce W. Smith; Will Conley; Cesar M. Garza; Jeff Meute; Daniel A. Miller; Georgia K. Rich; Victoria L. Graffenberg; Kim R. Dean; Shashikant Patel; Arnie Ford; James Foster; Marco H. P. Moers; Kevin D. Cummings; James E. Webb; Paul G. Dewa; Azeddine Zerrade; Susan S. MacDonald; Greg P. Hughes; Peter Dirksen
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Paper Abstract

Aberrations, aberrations, here there everywhere but how do we collect useful data that can be incorporated into our simulators? Over the past year there have no less than 18 papers published in the literature discussing how to measure aberrations to answering the question if Zernikes are really enough. The ability to accurately measure a Zernike coefficient in a timely cost effective manner can be priceless to device manufacturers. Exposure tool and lens manufacturers are reluctant to provide this information for a host of reasons, however, device manufacturers can use this data to better utilize each tool depending on the level and the type of semiconductors they produce. Dirksen et al. first discussed the ring test as an effective method of determining lens aberrations in a step and repeat system, later in a scanning system. The method is based on two elements; the linear response to the ring test to aberrations and the use of multiple imaging conditions. The authors have been working to further enhance the capability on the test on the first small field 157 nm exposure system at International SEMATECH. This data was generated and analyzed through previously discussed methods for Z5 through Z25 and correlated back to PMI data. Since no 157nm interferemetric systems exist the lens system PMI data was collected at 248nm. Correlation studies have isolated the possible existence of birefringence in the lens systems via the 3-foil aberration which was not seen at 248nm. Imaging experiments have been conducted for various geometry's and structures for critical dimensions ranging from 0.13micrometers down to 0.10micrometers with binary and 0.07micrometers with alternating phase shift mask. The authors will review the results of these experiments and the correlation to imaging data and PMI data.

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474551
Show Author Affiliations
Bruce W. Smith, Rochester Institute of Technology (United States)
Will Conley, International SEMATECH (United States)
Motorola (United States)
Cesar M. Garza, Motorola (United States)
Jeff Meute, International SEMATECH (United States)
IBM Corp. (United States)
Daniel A. Miller, International SEMATECH (United States)
Georgia K. Rich, International SEMATECH (United States)
Victoria L. Graffenberg, International SEMATECH (United States)
Kim R. Dean, International SEMATECH (United States)
Shashikant Patel, International SEMATECH (United States)
Arnie Ford, International SEMATECH (United States)
James Foster, ASML (United States)
Marco H. P. Moers, ASML (Netherlands)
Kevin D. Cummings, ASML (United States)
James E. Webb, Corning Tropel Corp. (United States)
Paul G. Dewa, Corning Tropel Corp. (United States)
Azeddine Zerrade, DuPont Photomasks, Inc. (United States)
Susan S. MacDonald, DuPont Photomasks, Inc. (United States)
Greg P. Hughes, DuPont Photomasks, Inc. (United States)
Peter Dirksen, Philips Research Labs. (Belgium)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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