Share Email Print

Proceedings Paper

Challenging the limit of single mask exposure
Author(s): Kenji Yamazoe; Masanobu Hasegawa; Kenji Saitoh; Akiyoshi Suzuki
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

IDEALSmile is introduced as a new exposure technique. Since we have realized k1 equals 0.29, k1 equals 0.32 optical lithography is now achievable. In this paper IDEALSmile is targeted for contact hole patterns. The results validate that it is possible to simultaneously fabricate 110 nm (k1 0.32) half-pitch dense and isolated contact hole patterns using Canon FPA-5000ES3 (KrF, NA equals 0.73). Furthermore, our experimental results also show that it is possible to fabricate different half-pitch patterns at the same exposure dose, which is impossible by conventional methods. Since these results are obtained using binary mask and the modified illumination with single exposure, there are no concerns with regards to decrease in throughput and increase in cost of ownership. By attaining k1 equals 0.32 for contact hole patterns using binary mask with single exposure, printing 100 nm contact hole patterns can be achieved with single exposure using KrF lithography, such as the Canon FPA-5000ES4 (KrF, NA equals 0.80) scanner which will soon make its market debut. ArF or F2 lithography is effective as for contact hole patterns below the 100 nm node. There is no doubt that optical microlithography will continue for some time.

Paper Details

Date Published: 30 July 2002
PDF: 12 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474549
Show Author Affiliations
Kenji Yamazoe, Canon Inc. (Japan)
Masanobu Hasegawa, Canon Inc. (Japan)
Kenji Saitoh, Canon Inc. (Japan)
Akiyoshi Suzuki, Canon Inc. (Japan)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

© SPIE. Terms of Use
Back to Top