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Proceedings Paper

Limitation of optical lithography for various resolution enhancement technologies
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Paper Abstract

In this paper, we will discuss the limitation of optical lithography with various resolution enhancement technologies. Lithography simulation was done by Hynix OPC Simulation Tool (HOST) based on Diffused Aerial Image Model (DAIM). The effects of numerical aperture (NA), wavelength, illumination conditions, mask and diffusion length of acid were simulated in view of resolution improvement. Diffusion length of acid is a dominant factor for resolution improvement for sub-100 nm era. As pattern size decreased, the limitation of optical lithography is more affected by diffusion length of acid. And other factors (NA, wavelength, illumination conditions and mask) will be discussed. Finally, ultimate the limitation of lithography will be discussed analytically.

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474545
Show Author Affiliations
Tae-Seung Eom, Hynix Semiconductor, Inc. (South Korea)
Chang-Nam Ahn, Hynix Semiconductor, Inc. (South Korea)
Dong-Heok Park, Hynix Semiconductor, Inc. (South Korea)
Cha-Won Koh, Hynix Semiconductor, Inc. (South Korea)
Cheol-Kyu Bok, Hynix Semiconductor, Inc. (South Korea)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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