Share Email Print
cover

Proceedings Paper

ArF imaging with off-axis illumination and subresolution assist bars: a compromise between mask constraints and lithographic process constraints
Author(s): Yorick Trouiller; J. Serrand; Corinne Miramond; Yves Fabien Rody; Serdar Manakli; Pierre-Jerome Goirand
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The insertion point for the first scattering bar is a key point in the development of a process using assist features, because this semi dense feature will determine the overall depth of focus of the process. A study of the parameters, which influence the choice of this insertion point, has been performed using a 0.63 NA 193 nm scanner for a 100 nm CD target after litho. The impact of the scattering bar on: Depth of Focus, Energy Latitude, Mask Error Enhancement Factor, printability, and the effect of scattering bar line width variation on main feature described by a parameter called AFMEEF will be discussed in this paper. The optimal insertion point for the first scattering bar will strongly depend on the litho-graphic process and the mask parameters. A model is proposed to determine the optimal insertion point, as function of the dose, focus budget, minimal allowed scatterbar width, and mask CD dispersion for both scattering bars and main features.

Paper Details

Date Published: 30 July 2002
PDF: 8 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474539
Show Author Affiliations
Yorick Trouiller, CEA-LETI (France)
J. Serrand, STMicroelectronics (France)
Corinne Miramond, STMicroelectronics (France)
Yves Fabien Rody, Philips Research Lab. (France)
Serdar Manakli, STMicroelectronics (France)
Pierre-Jerome Goirand, STMicroelectronics (France)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

© SPIE. Terms of Use
Back to Top