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Proceedings Paper

Evaluation and characterization of flare in ArF lithography
Author(s): Lloyd C. Litt; Anatoly Bourov; Bruno M. La Fontaine; Eric M. Apelgren
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Paper Abstract

The impact of flare on lithographic imaging has been the subject of increased investigation as critical dimension requirements and K1 factors continue to be reduced. All 'real world' lithographic systems include aberrations and non-uniformities that detract from the ability to produce the ultimate imaging possible. The increased acceptance of double exposure techniques, such as complementary phase shift, can greatly increase the sensitivities of the process by effectively doubling the flare exposure in each image. All optical imaging systems have some amount of stray light, or flare, that detracts from system performance, critical dimension (CD) control, and process latitude. The effects of flare are compounded with the use of multiple exposure processes are used since this doubles the amount of exposure energy going through the optics and therefore increase the amount of stray light. Flare was characterized on two 0.63NA 193nm lithographic scanners using two different measurement techniques. Using a double-exposure technique previously presented new data that characterizes the across slit flare performance of a 193nm lithography system is reported. Data showing the effect of lens contamination and cleaning is also presented. In addition, a different flare metrology technique based on MTF was used to characterize the flare effects at a range of spatial frequencies. Metrology requirements and limitations of each technique are also discussed.

Paper Details

Date Published: 30 July 2002
PDF: 11 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474528
Show Author Affiliations
Lloyd C. Litt, Motorola (United States)
Anatoly Bourov, Rochester Institute of Technology (United States)
Bruno M. La Fontaine, Advanced Micro Devices, Inc. (United States)
Eric M. Apelgren, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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