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Proceedings Paper

Is it possible to improve MEEF?
Author(s): Seok-Hwan Oh; Hyoungkook Kim; Dae-Joung Kim; Young-Seok Kim; Chun-Suk Suh; Yong-Sun Koh; Chang-Lyong Song
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Paper Abstract

As the design rule of device has shrunken, obtaining a feasible process window at low k1 factor in photolithography is the major concerning in order to shorten the total period from development to the mass production of devices. In this low k1 factor region, a tiny CD variation on mask might be increased abruptly on the wafer. In particular, such variation so called MEEF (Mask Error Enhancement Factor) is closely related with various types of process parameter. In this paper, we reviewed optimized process condition to minimize MEEF and defined uDoF (Usable Depth of Focus) considering a correlation between MEEF and DoF (Depth of Focus).

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474522
Show Author Affiliations
Seok-Hwan Oh, Samsung Electronics Co., Ltd. (South Korea)
Hyoungkook Kim, Samsung Electronics Co., Ltd. (South Korea)
Dae-Joung Kim, Samsung Electronics Co., Ltd. (South Korea)
Young-Seok Kim, Samsung Electronics Co., Ltd. (South Korea)
Chun-Suk Suh, Samsung Electronics Co., Ltd. (South Korea)
Yong-Sun Koh, Samsung Electronics Co., Ltd. (South Korea)
Chang-Lyong Song, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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