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Proceedings Paper

MEF studies for attenuated phase-shift mask for sub-0.13-um technology using 248 nm
Author(s): Sia-Kim Tan; Qunying Lin; Gek Soon Chua; Chenggen Quan; Cho Jui Tay
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Paper Abstract

Mask error factor (MEF) plays an important role as lithography progresses to sub wavelength patterning. For patterning feature in the sub wavelength region of the illuminating system, namely 0.10 um line and space feature, resolution enhancement techniques (RET) such as optical proximity correction (OPC), and assist features (AF) are applied. A study on the impact of MEF on 248 nm lithography will be investigated. Experimental results for both isolated line and dense lines up to 0.10 um with AF will be obtained and analyzed. A through pitch experimental study shows a decrement in MEF from dense line to semi-isolated line. Experimental studies on varying the placements of the assist features for both isolated will be conducted. Furthermore, the study also included the comparison by conventional and annular illumination for both line and space. Simulation results will also be utilized as a comparison.

Paper Details

Date Published: 30 July 2002
PDF: 7 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474520
Show Author Affiliations
Sia-Kim Tan, National Univ. of Singapore (Singapore)
Qunying Lin, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Gek Soon Chua, National Univ. of Singapore (Singapore)
Chenggen Quan, National Univ. of Singapore (Singapore)
Cho Jui Tay, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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