Share Email Print
cover

Proceedings Paper

LER as structural fluctuation of resist reaction and developer percolation
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Line edge roughness (LER) in chemically amplified resists (CARs) is analyzed as a fluctuation in acid catalyzed reaction to determine molecular solubility and developer percolation. Two probability processes to cause LER are modeled: the local acid generation/diffusion process and the main reaction/developer percolation processes. LER caused by fluctuation in the main reaction and percolation is found to be significantly larger than molecular size. Dependence of LER on various parameters is clarified, such as acid concentration, diffusion length, molecular sizes, protection ratio and its variation, and image. Our results suggested a trade-off relation between the acid fluctuation component and the main reaction component of LER in most ArF resists today. High contrast exposure characteristics of the dissolution rate in CARs today are also explained with the model.

Paper Details

Date Published: 30 July 2002
PDF: 11 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474519
Show Author Affiliations
Hiroshi Fukuda, Hitachi, Ltd. (Japan)
Atsuko Yamaguchi, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

© SPIE. Terms of Use
Back to Top