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Proceedings Paper

New photomask substrate for improved lithography performance
Author(s): Bryan S. Kasprowicz; Richard Priestley; Michael R. Heslin; David R. Fladd
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Paper Abstract

As we enter the deep sub-wavelength lithography regime, using the 193 nm wavelength for the 130 nm node and beyond, the often overlooked mask material properties are beginning to have an impact on imaging performance. By analyzing properties such as index of refraction homogeneity and stress birefringence it was found that a wide variation exists within the available population of mask materials. The investigation of these materials demonstrated the considerable range in performance that can be achieved from the population of mask materials. We will show that due diligence in the selection of the mask material will provide the ability to image multiple features with a reduction in Mask Error Enhancement Factor and improved critical dimension uniformity on the wafer.

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474515
Show Author Affiliations
Bryan S. Kasprowicz, Photronics, Inc. (United States)
Richard Priestley, Corning Inc. (United States)
Michael R. Heslin, Corning Inc. (United States)
David R. Fladd, Jacobian Technologies (United States)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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