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Proceedings Paper

OPC and image optimization using localized frequency analysis
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Paper Abstract

A method of assist feature OPC layout is introduced using a frequency model-based approach. Through low-pass spatial frequency filtering of a mask function, the local influence of zero diffraction energy can be determined. By determining isofocal intensity threshold requirements of an imaging process, a mask equalizing function can be designed. This provides the basis for frequency model-based assist feature layout. By choosing assist bar parameters that meet the requirements of the equalizing function, through-pitch focus and dose matching is possible for large two dimensional mask fields. The concepts introduced also lead to additional assist feature options and design flexibility.

Paper Details

Date Published: 30 July 2002
PDF: 10 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474509
Show Author Affiliations
Bruce W. Smith, Rochester Institute of Technology (United States)
Dale E. Ewbank, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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