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Accuracy of new analytical models for resist formation lithography
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Paper Abstract

The applicability and accuracy of newly developed analytical models for resist process effects are investigated. These models combine a stationary level set formulation with a lumped parameter model. They allow to propagate the 3D photoresist profile given the 3D aerial image distribution. The first model, based on the vertical propagation algorithm (VPM), takes into account the 2D intensity distribution inside the resist, including the absorption. The second model incorporates the scaled defocus algorithm (SCDF), which describes the 3D intensity of the resist, taking into account the defocus values. In this paper we investigate the applicability for any geometry, for process window determination and the accuracy by taking reference to the fully fledged simulator SOLID-C. The suggested methods allow to calculate 3D resist profile in a fast way thereby enabling the prediction of large areas.

Paper Details

Date Published: 30 July 2002
PDF: 12 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474506
Show Author Affiliations
Juriy Malov, SIGMA-C GmbH (Germany)
Christian K. Kalus, SIGMA-C GmbH (Germany)
Henning Muellerke, SIGMA-C GmbH (Germany)
Thomas Schmoeller, SIGMA-C GmbH (Germany)
Robert Wildfeuer, SIGMA-C GmbH (Germany)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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