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Proceedings Paper

Accuracy of simulation based on the acid-quencher mutual diffusion model in KrF processes
Author(s): Keiko T. Hattori; Jun Abe; Hiroshi Fukuda
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Paper Abstract

The accuracy of the acid-quencher mutual diffusion model was examined for three commercial resists (acetal-type resists for use with KrF exposure), by comparing results for real wafer CDs with simulated results as obtained by using the model with best-fit parameters (diffusion length for acid/quencher, and relative concentration of quencher). Utilizing our model reduced the deviation between simulated and measured CDs for a wide range of patterns to 6 nm in terms of standard deviation and +/- 10 nm in terms of p-v range. Best-fit Parameters are in the following ranges; acid-diffusion length equals 7 - 13 nm, quencher-diffusion length equals 150 - 200 nm, and relative quencher concentration equals 0.16 - 0.175 (all for two-iteration calculation). The best-fit diffusion length dependence on number of iterations in diffusion/quenching calculation implied agreement with Fick's law and the dependence of the best-fit relative quencher concentration on exposure dose suggested the validity of this model. Quencher diffusion into an organic bottom anti-reflective coating (BARC) was also observed by carrying out a simple experiment.

Paper Details

Date Published: 30 July 2002
PDF: 11 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474505
Show Author Affiliations
Keiko T. Hattori, Hitachi Central Research Lab. (Japan)
Jun Abe, Hitachi Device Development Ctr. (Japan)
Hiroshi Fukuda, Hitachi Central Research Lab. (Japan)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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