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Proceedings Paper

New methods to calibrate simulation parameters for chemically amplified resists
Author(s): Bernd Tollkuehn; Andreas Erdmann; Niko Kivel; Stewart A. Robertson; Doris Kang; Steven G. Hansen; Anita Fumar-Pici; Tsann-Bim Chiou; Wolfgang Hoppe
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Paper Abstract

In this paper we examine new models and the indispensability of model parameters of chemically amplified resists (CAR) for their usage in predictive process simulation. Based on a careful exploration of different modeling options we calibrate the model parameters with different experimental data. Furthermore, we investigate different modeling approaches: (1) Mode of coupling between diffusion and kinetic reactions, sequence of quencher base events (Hinsberg model); (2) Mode of diffusion: Fickian and linear diffusion model; (3) Development rate model: Performance of the Enhanced Notch model. The resulting models are evaluated with respect to their performance by comparing with experimental line-width for semidense (1-2, 1-1.6, 1-1.4, 1-1.2) and dense features, the bias between different features and full resist profiles. The investigations are applied to the Shipley resist UVTM 113. Finally, a parameter extraction procedure for chemically amplified resists is proposed.

Paper Details

Date Published: 30 July 2002
PDF: 12 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474497
Show Author Affiliations
Bernd Tollkuehn, Fraunhofer-Institut fuer Integrierte Schaltungen (Germany)
Andreas Erdmann, Fraunhofer-Institut fuer Integrierte Schaltungen (Germany)
Niko Kivel, Fraunhofer-Institut fuer Integrierte Schaltungen (Germany)
Univ. of Applied Sciences Muenster (Germany)
Stewart A. Robertson, Shipley Co. L.L.C. (United States)
Doris Kang, Shipley Co. L.L.C. (United States)
Steven G. Hansen, ASML (United States)
Anita Fumar-Pici, ASML (United States)
Tsann-Bim Chiou, ASML (United States)
Wolfgang Hoppe, SIGMA-C GmbH (Germany)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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