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Proceedings Paper

Assist feature OPC implementation for the 130 nm technology node with KrF and no forbidden pitches
Author(s): James C. Word; Siuhua Zhu; John L. Sturtevant
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Paper Abstract

At the 130 nm technology node with KrF illumination the k1 factor is only approximately 0.35. At k1 equals 0.35 it becomes essential to apply some form of Resolution Enhancement Technology (RET). The addition of sub-resolution assist features is one route to achieving a manufacturable process window. One potential drawback to assist features has always been the so called 'forbidden pitch' issue. In this paper the authors will describe a method for achieving a manufacturable process window for all pitches including those within the 'forbidden pitch' zone. The authors will show through simulation how careful optimization of the illumination settings can result in a manufacturable process window for all pitches. Finally, experimental results will be given which confirm the through pitch performance of the final process.

Paper Details

Date Published: 30 July 2002
PDF: 9 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474494
Show Author Affiliations
James C. Word, Integrated Device Technology, Inc. (United States)
Siuhua Zhu, Integrated Device Technology, Inc. (United States)
John L. Sturtevant, Integrated Device Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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