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Proceedings Paper

3D lumped parameter model for lithographic simulations
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Paper Abstract

Simplified resist models are desired for fast simulation of resist profiles over large mask areas. The Lumped Parameter Model was originally developed as one such model. However, the LPM model has been limited to 2D resist simulations of 1D aerial image slices with positive tone resists. In this paper we present a modified Lumped Parameter Model applicable to 3D resist simulations of both positive and negative tone resists. In addition several new LPM parameters are introduced that further improve accuracy. The derivation of the 3D LPM model, rationale for including the new parameters, and simulation results using the new model are given.

Paper Details

Date Published: 30 July 2002
PDF: 13 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474490
Show Author Affiliations
Jeff D. Byers, KLA-Tencor Corp. (United States)
Mark D. Smith, KLA-Tencor Corp. (United States)
Chris A. Mack, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

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