Share Email Print

Proceedings Paper

Effect of quartz phase etch on 193-nm alternating phase-shift mask performance for the 100-nm node
Author(s): Kyle Patterson; Lloyd C. Litt; John G. Maltabes; Greg P. Hughes; Trish Robertson; B. Montgomery
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Alternating aperture phase shifting mask (AAPSM) technology is finding increased use in the patterning of critical layers due to the enhanced resolution and decreased linewidth variation characteristic of this technique. The potential advantages of AAPSM processes must be weighed against the increased complexity of reticle layout, higher reticle cost, and heightened sensitivity to parameters such as lens aberration. This work details the effect of shifter trench depth on patterning performance for the 100nm node. Data was collected at an exposure wavelength of 193nm using reticles built with deliberate errors in shifter trench depth. Differences in patterning performance observed as a result of these variations are compared with the impact predicted from modeling.

Paper Details

Date Published: 30 July 2002
PDF: 8 pages
Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); doi: 10.1117/12.474481
Show Author Affiliations
Kyle Patterson, Motorola (United States)
Lloyd C. Litt, Motorola (United States)
John G. Maltabes, Motorola (United States)
Greg P. Hughes, DuPont Photomasks, Inc. (United States)
Trish Robertson, Motorola (United States)
B. Montgomery, Motorola (United States)

Published in SPIE Proceedings Vol. 4691:
Optical Microlithography XV
Anthony Yen, Editor(s)

© SPIE. Terms of Use
Back to Top