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Proceedings Paper

Electric field distribution in InGaAs/InP PIN photodetector
Author(s): P Chiu; Ishiang Shih
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Paper Abstract

In the present work, electric field distribution of an InGaAs/InP PIN mesa type photodetector is studied by employing electron beam induced current (EBIC) technique using a scanning electron microscope (SEM) with consideration of electron-hole pair generation volume. Depletion width and p+/n- metallurgical junction location are determined in the experiment.

Paper Details

Date Published: 17 February 2003
PDF: 5 pages
Proc. SPIE 4833, Applications of Photonic Technology 5, (17 February 2003); doi: 10.1117/12.474403
Show Author Affiliations
P Chiu, McGill Univ. (Canada)
Ishiang Shih, McGill Univ. (Canada)


Published in SPIE Proceedings Vol. 4833:
Applications of Photonic Technology 5

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