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Proceedings Paper

Microscopic modeling of intersubband optical processes in Type II semiconductor quantum wells: linear absorption
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Paper Abstract

Intersubband absorption spectra are analyzed using the density matrix theory under the second Born approximation. The intersubband semiconductor Bloch equations are derived from the first principles including electron-electron and electron-longitudinal optical phonon interactions, whereas electron-interface roughness scattering is considered using Ando's theory. A spurious-states-free 8-band k•p Hamiltonian is used, in conjunction with the envelope function approximation to calculate the electronic band structure self-consistently for type II InAs/AlSb multiple quantum well structures. We demonstrate the interplay of various physical processes in the absorption spectra in the mid-infrared frequency range.

Paper Details

Date Published: 25 July 2003
PDF: 10 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.474398
Show Author Affiliations
Jianzhong Li, NASA Ames Research Ctr. (United States)
Konstantin I. Kolokolov, NASA Ames Research Ctr. (United States)
Cun-Zheng Ning, NASA Ames Research Ctr. (United States)


Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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