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Proceedings Paper

Recent advances in long-wavelength GaAs-based quantum dot lasers
Author(s): Nikolai N. Ledentsov; Dieter Bimberg; Roman Sellin; C. Ribbat; Victor M. Ustinov; Alexey E. Zhukov; Alexey R. Kovsh; Mikhail V. Maximov; Yuri M. Shernyakov
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Paper Abstract

1.3 μm GaAs-based quantum dot (QD) lasers demonstrate parameters improved over InP-based devices. They exhibit lower threshold current densities and losses, higher differential efficiencies and improved temerature stability. Highspeed operation is demonstrated. Reduced linewidth enhancement factor advantageous for low-chirp operation makes it possible to suppress dramatically filamentation effects destroying lateral far-field pattern. GaAs-based QD 1.3 μm VCSEL with 8 μm oxide aperture wavelength emits up to 1.2 mW CW multimode.

Paper Details

Date Published: 25 July 2003
PDF: 10 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.474390
Show Author Affiliations
Nikolai N. Ledentsov, Technische Univ. Berlin (Germany)
A.F. Ioffe Physical-Technical Institute (Russia)
Dieter Bimberg, Technische Univ. Berlin (Germany)
Roman Sellin, Technische Univ. Berlin (Germany)
C. Ribbat, Technische Univ. Berlin (Germany)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey E. Zhukov, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey R. Kovsh, A.F. Ioffe Physico-Technical Institute (Russia)
Mikhail V. Maximov, A.F. Ioffe Physico-Technical Institute (Russia)
Yuri M. Shernyakov, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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