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Proceedings Paper

Beam filamentation and maximum optical power in high-brightness tapered lasers
Author(s): Luis Borruel; Slawomir Sujecki; Daniel Rodriguez; Jim Wykes; Michel M. Krakowski; Pablo Moreno; Phillip Sewell; Trevor Mark Benson; Eric C. Larkins; Ignacio Esquivias
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Paper Abstract

In this work we use a numerical model to analyze the beam filamentation in tapered lasers with the goal of optimizing the epitaxial structure. The model self-consistently solves the steady state electrical and optical equations for the flared unstable resonator. This model has been applied to simulate the performance of InGaAs/InGaAsP tapered lasers emitting at 975 nm. We investigate the role of the active material properties (carrier induced index change, differential gain) and of the epitaxial design (optical confinement factor) on the filamentation process and on the maximum achievable power.

Paper Details

Date Published: 25 July 2003
PDF: 9 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.474375
Show Author Affiliations
Luis Borruel, Univ. Politecnica de Madrid (Spain)
Slawomir Sujecki, Univ. of Nottingham (United Kingdom)
Daniel Rodriguez, Univ. Politecnica de Madrid (Spain)
Jim Wykes, Univ. of Nottingham (United Kingdom)
Michel M. Krakowski, Thales Research and Technology (France)
Pablo Moreno, Univ. Politecnica de Madrid (Spain)
Phillip Sewell, Univ. of Nottingham (United Kingdom)
Trevor Mark Benson, Univ. of Nottingham (United Kingdom)
Eric C. Larkins, Univ. of Nottingham (United Kingdom)
Ignacio Esquivias, Univ. Politecnica de Madrid (Spain)


Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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