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Proceedings Paper

InAs photodetectors for high-speed detection of infrared radiation
Author(s): Jozef Piotrowski; Zbigniew Orman; Janusz Kaniewski
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Paper Abstract

We report here uncooled and thermoelectrically cooled InAs photodetectors designed for fast and sensitive detection of IR radiation. This has been achieved by the use of a complex architecture of the device that ensures reduced thermal generation of charge carriers, fast diffusion and drift transport of photogenerated carriers across the absorber region, a low series resistance, and a low capacitance. In addition, the device are monolithically immersed to GaAs hyperhemispherical microlenses that reduces capacitance by more than two orders of magnitude in comparison to non-immersed devices of the same optical area. As a result, the optimized devices are characterized by picosecond response time.

Paper Details

Date Published: 17 February 2003
PDF: 6 pages
Proc. SPIE 4833, Applications of Photonic Technology 5, (17 February 2003); doi: 10.1117/12.474368
Show Author Affiliations
Jozef Piotrowski, VIGO System, Ltd. (Poland)
Zbigniew Orman, VIGO System, Ltd. (Poland)
Janusz Kaniewski, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 4833:
Applications of Photonic Technology 5

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