Share Email Print

Proceedings Paper

InAs photodetectors for high-speed detection of infrared radiation
Author(s): Jozef Piotrowski; Zbigniew Orman; Janusz Kaniewski
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We report here uncooled and thermoelectrically cooled InAs photodetectors designed for fast and sensitive detection of IR radiation. This has been achieved by the use of a complex architecture of the device that ensures reduced thermal generation of charge carriers, fast diffusion and drift transport of photogenerated carriers across the absorber region, a low series resistance, and a low capacitance. In addition, the device are monolithically immersed to GaAs hyperhemispherical microlenses that reduces capacitance by more than two orders of magnitude in comparison to non-immersed devices of the same optical area. As a result, the optimized devices are characterized by picosecond response time.

Paper Details

Date Published: 17 February 2003
PDF: 6 pages
Proc. SPIE 4833, Applications of Photonic Technology 5, (17 February 2003); doi: 10.1117/12.474368
Show Author Affiliations
Jozef Piotrowski, VIGO System, Ltd. (Poland)
Zbigniew Orman, VIGO System, Ltd. (Poland)
Janusz Kaniewski, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 4833:
Applications of Photonic Technology 5
Roger A. Lessard; George A. Lampropoulos; Gregory W. Schinn, Editor(s)

© SPIE. Terms of Use
Back to Top