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Proceedings Paper

Third-order nonlinearity in SnO2:SiO2 wide-bandgap semiconductor-doped glasses
Author(s): Alberto Paleari; Norberto Chiodini; Giorgio Spinolo
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Paper Abstract

Wide-band-gap semiconductor-doped-glasses were obtained by synthesizing SnO2:SiO2 nanostructured glassceramics. In this binary system, comprising two chemically compatible oxides, crystalline SnO2 nanoclusters were embedded in a pure silica matrix in a controlled way, by setting appropriate thermochemical parameters, up to 10% of volume fraction of the semiconductor crystalline phase. Measurements of third order non-linearity were carried out by means of z-scan technique at 1064 nm finding a non linear refractive index comparable with that of glasses doped with Cd chalcogenides. Optical spectroscopy, micro-Raman scattering and electron microscopy indicated good optical and nano-structural features, suitable for stable optical applications, both in bulk and film samples.

Paper Details

Date Published: 19 June 2003
PDF: 8 pages
Proc. SPIE 4987, Integrated Optics: Devices, Materials, and Technologies VII, (19 June 2003); doi: 10.1117/12.474354
Show Author Affiliations
Alberto Paleari, Univ. degli Studi di Milano-Bicocca (Italy)
Norberto Chiodini, Univ. degli Studi di Milano-Bicocca (Italy)
Giorgio Spinolo, Univ. degli Studi di Milano-Bicocca (Italy)


Published in SPIE Proceedings Vol. 4987:
Integrated Optics: Devices, Materials, and Technologies VII
Yakov S. Sidorin; Ari Tervonen, Editor(s)

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