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Proceedings Paper

Material and process development of tri-level resist system in KrF and ArF lithography
Author(s): Tsuyoshi Shibata; Seiji Nakagawa; Yasuhiko Sato; Koutaro Sho; Hisataka Hayashi; Junko Abe
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Paper Abstract

A material and process development of a tri-level resist system is carried out to introduce the resist system into 130nm and 110nm device fabrication. The tri-level resist system consists of organic films as a bottom layer, spin-on- glass (SOG) as a middle layer and DUV photoresists as a top imaging layer. A wettability and an acidity of the SOG film are adjusted depending on the type of resist materials to obtain a desirable resist profile. The anti-reflective performance of the tri-level resist system is evaluated along with the lithographic performance. A light reflection (reflectivity) in the DUV photoresist film is reduced less than 0.5% for both KrF resist and ArF resist by choosing the nominal thickness of the SOG film and the bottom layer. A conventional DNQ-Novolak type MUV resist is used for the bottom layer in the KrF tri-level resist system. The MUV resist is thermally cured to avoid mixing with the SOG and to increase the optical density at 248nm wavelength. A newly developed spin-on-carbon film is used for the bottom layer in the ArF tri-level resist system. The spin-on-carbon has an excellent dry etch resistance because of its high carbon content (>90%). The dry etch rates of the MUV resist and the spin-on-carbon for CF4/O2/Ar etch chemistry (SiN RIE condition) are 372nm/min and 287nm/min respectively. A pattern transfer using the tri-level resist system is demonstrated for both L/S and hole structures.

Paper Details

Date Published: 24 July 2002
PDF: 9 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474278
Show Author Affiliations
Tsuyoshi Shibata, Toshiba Corp. (Japan)
Seiji Nakagawa, Toshiba Corp. (Japan)
Yasuhiko Sato, Toshiba Corp. (Japan)
Koutaro Sho, Toshiba Corp. (Japan)
Hisataka Hayashi, Toshiba Corp. (Japan)
Junko Abe, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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